Anis M. Saad

Manufacturing and Electrical Characterization of MOS Devices of Ultrathin Silicon Dioxide Layer

Anis M. Saad · Physical Science International Journal · 2018

Metal-Oxide-Semiconductor–MOS devices presented here with thermally grown oxide layer of 3.04-5.92 nm thick were fabricated using p-type Si substrate. Capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics in frequency range of 10 kHz-100 kHz between 22 and 100...