C. T. Ma

An Investigation on Characteristics of GaN Based MOSFETs and Their Driving Circuits

C. T. Ma & Z. H. Gu · Archives of Current Research International · 2016

Gallium nitride (GaN) based semiconductor devices are expected to play an important role in developing the next-generation power converters. With some intrinsic features, e.g., low switching power loss and high breakdown voltage, GaN MOSFETs can be used to realize high power dens...