Influence of Quantum Effects on Amplitude Modulation in n-InSb Semiconductor

Abstract

The effect of quantum mechanical corrections in semiconductor plasma has been analytically investigated through amplitude modulational instability in unmagnetized piezoelectric semiconductor crystals. In a semiconducting crystal, each energy level can be occupied at most by two electrons owing to the spatial overlap of the wave functions. The Fermi-Dirac distribution rather than Maxwell-Boltzmann distribution functions describe the occupation of the energy level of electrons and incorporate the new quantum forces associated with the quantum Bohm potentials. In this paper, our main aim was to explore the modification in the modulational characteristics of semiconductor plasmas using the QHD model. The results show significant changes in the amplitude modulational characteristics due to the quantum mechanical effects, highlighting the importance of considering quantum hydrodynamic models in semiconductor plasma studies. This research provides valuable insights for understanding the behavior of n-type InSb crystals under laser illumination at low temperatures. The numerical estimates are made for n-type InSb crystal at 77 K duly shone by pulsed 10.6 CO2 laser.