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Research Article Open access CC BY 4.0

Effect of Gamma Radiation in Undoped SnO2 Thin Films

A. F. Maged, L. A. Nada, M. Amin

Physical Science International Journal · pp. 20–27 · Published 7 May 2015

10.9734/PSIJ/2015/17250

Abstract

This paper was reported on study the effect of gamma radiation on nanoporous SnO2 electrodes for dye-sensitized solar cells. Structural, optical and electrical properties were studied. The refractive index was decreased with the increase in gamma radiation. The resistivity of thin films was decreased about 40% with the increase of gamma radiation at 659 nm film thicknesses. The mobility and carrier concentration were increased with the increase of gamma dose at 659 nm film thickness.  

SnO2 semiconductors thin film radiation

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