M-Polynomial and Degree Based Topological Indices for Silicon Oxide

P. J. N. Thayamathy; P. Elango; M. Koneswaran

doi:10.9734/IRJPAC/2018/42645

Research Article Open access CC BY 4.0

M-Polynomial and Degree Based Topological Indices for Silicon Oxide

P. J. N. Thayamathy, P. Elango, M. Koneswaran

International Research Journal of Pure and Applied Chemistry · pp. 1–9 · Published 7 Jul 2018

10.9734/IRJPAC/2018/42645

Abstract

Silican oxide (SiO2) is the most abundant oxide present on the surface of the earth which has a wide spectrum of technological applications due to it's various chemical and physical properties. The topological index is a numerical representation of a molecular structure. The first topological index in chemical graph theory is the Winer index which is a distance-based topological index. The degree-based topological indices are the most studied type of topological indices which play a prominent role in chemical graph theory. In this paper, we derive the M-Polynomial for Silican oxide SiO2 layer structure and calculate some of the important degree based topological indices using this M-polynomial. We derive the M-Polynomial derivative formula for the ABC-index and calculate the ABC-index by using this derived formula.

M-polynomials chemical graph theory silicon oxide topological index

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P. J. N. Thayamathy, P. Elango, M. Koneswaran (2018). M-Polynomial and Degree Based Topological Indices for Silicon Oxide. International Research Journal of Pure and Applied Chemistry , 1–9. https://doi.org/10.9734/IRJPAC/2018/42645

Affiliations

P. J. N. Thayamathy — Department of Mathematics, Faculty of Science, Eastern University, Sri Lanka
P. Elango — Department of Mathematics, Faculty of Science, Eastern University, Sri Lanka
M. Koneswaran — Department of Chemistry, Faculty of Science, Eastern University, Sri Lanka

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