Analysis of Water Mass Flow Rate Influence on a Crystalline Silicon Cell Temperature and Electronic Parameters under Concentrated Light

Abstract

This study aims to analyze the effect of water mass flow rate on a Si-solar cell temperature and electronic parameters through two models. From the thermal model, the thermal equation is determined and solved to obtain the cell temperature versus light concentration and for different mass flow rates. By the electrical model, the electronic parameters were determined and plotted also versus light concentration and water mass flow rate. Results show that temperature rises with light concentration and decreases with increasing mass flow rate. Mobility and diffusion coefficients of electrons and holes as well as the silicon gap energy, decrease with light concentration but all increase with rising mass flow rate. The electrons intrinsic density increases with concentration and fall down with mass flow rise. Near the open-circuit, this effect of mass flow rate on intrinsic density is sufficient to cause variations of carrier density at the junction and to predict slight variations in open-circuit-voltage. However, in intermediate and short-circuit operating situations, the effect of mass flow on carrier density is insufficient to expect significant variations in current. On the other hand, results show a reduction in the cooling effect of water as the mass flow rate rises.