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Research Article Open access CC BY 4.0

Electrical and Photoelectric Properties of Crystal InGaTe2

E. M. Gojayev, A. G. Kazim-zade, V. M. Salmanov, A. G. Guseynov, U. S. Abdurahmanova, R. M. Mamedov

Physical Science International Journal · pp. 1–8 · Published 30 Sep 2015

10.9734/PSIJ/2015/18553

Abstract

The electroconductivity, photoconductivity and relaxation curves of the nonequilibrium photoconductivity in InGaTe2  crystals under  incandescent lamp light sources and laser light have been experimentally investigated. It is shown that the optical absorption in the InGaTe2  due to indirect and direct optical transitions, the band gap of 1.02 eV and 1.42 eV, respectively. Acceptor centers are found, at a depth of 0.203 eV and 0.801 eV. At high levels optical excitation in InGaTe2  observed two-photon absorption. It was found that the nonequilibrium photoconductivity observed in InGaTe2  crystals under the action of 1st and 2nd harmonic of neodymium laser radiation, due to the impurity, bipolar and the two-photon photoconductivity.

Compound InGaTe2 indirect and direct optical transitions non-linear optic properties photoelectric properties

Cited by 1

The investigation of the acousto-photovoltaic effect in single crystals TlIn1−xGaxSe2

E. M. Gojayev, G. N. Mamedova, S. S. Osmanova · International Journal of Modern Physics B · 2020

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