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Research Article Open access CC BY 3.0

Application of the Level Set Method in Three-Dimensional Simulations of the Profile Evolution

Branislav Radjenović, Marija Radmilović-Radjenović, Petar Beličev

International Research Journal of Pure and Applied Chemistry · pp. 562–567 · Published 17 May 2014

10.9734/IRJPAC/2014/8704

Abstract

In this paper, the angular dependence of the etching rate is applied in the three-dimensional simulations of the profile evolution during etching process. Etching rates are determined from the silicon symmetry properties by the interpolation technique using experimentally obtained values. The influence of the KOH concentration on the etch rate is also discussed. As the etchant concentration increases the etching rate decreases, while increasing etching temperature resulted in increased etching rate. Three-dimensional simulation results were obtained using an extension of the sparse field method for solving level set equations that describe the time evolution of the surface during etching process. The obtained simulation results illustrate that relatively simple model with only four parameters describes convex corner undercutting correctly.  

Chemical etching silicon etchants crystal solution

Cited by 1

Dynamic Pattern Formation in Electron-Beam-Induced Etching

Aiden A. Martin, Alan Bahm, James Bishop · Physical Review Letters · 2015

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